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Development of innovative technologies in solar cell manufacturing process

  • Date 2021-11-11
    Writer 관리자 Views 789

A joint research project between the Korea Institute of Energy Research and Chungbuk National University had grown single-crystal silicon on the parent substrate in a bottom-up manner. It then reversely used plasma epitaxy* silicon, previously considered defective due to its porous structure, to cut the silicon wafer as if peeled off along a perforation line with a developed technology for easy peeling.
*Epitaxy: A term comes from the Latin roots epi, meaning 'above' and taxis, meaning 'in an ordered manner, referring to the process of growing a crystal of a particular orientation on top of another crystal in the field of semiconductor materials/devices
*Plasma epitaxy: a method to achieve layer-by-layer crystalline growth through a gas decomposition reaction using plasma on a single crystal substrate among ways to implement epitaxy

In recognition of the applicability and innovativeness of industrial technology, this technology was published in 'Advanced Materials (IF 30.849)', which is the most prestigious international academic journal in the field of materials science, as of October 14. It was also selected as a back cover paper.

The research team said, “Since the technology developed this time is based on chemical vapor deposition, widely used in various semiconductor, solar cell, display, and sensor processes, it will greatly affect various device manufacturing technologies using silicon wafers. It will contribute to the government-led projects to strengthen competitiveness in the domestic value chain materials, components, and equipment fields through connection with device manufacturing technology”.

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